Resumen de Long-term degradation of InGaN-based laser diodes: Role of defects
D. Monti, M. Meneghini, C. De Santi, G. Meneghesso, E. Zanoni, A. Bojarska, P. Perlin
Abstract The aim of this paper is to give an extensive presentation of the defect-related degradation of InGaN-based laser diodes (LDs) submitted to constant current stress, at room temperature. The analysis is based on combined electrical-optical characterization, the capacitance-temperature analysis, and deep-level transient spectroscopy (DLTS). The results show that stress induces a significant increase of the threshold current and the appearance of two defects, possibly related to point defects arranged along lines.
