Novel 4H‐SiC BJT utilizing floating buried layer in base for high current gain, high current gain stability and high breakdown voltage

• Yourun Zhang ^[1] ; Bo Zhang ^[1] ; Zhaoji Li ^[1] ; Xiaochuan Deng ^[1] ; Xilin Liu ^[1]
  1. [1] University of Electronic Science and Technology of China

     University of Electronic Science and Technology of China

     China

     
• Localización: Compel: International journal for computation and mathematics in electrical and electronic engineering, ISSN 0332-1649, Vol. 29, Nº 2 (Special Issue: Selected papers from CAC 2008), 2010, págs. 515-521
• Idioma: inglés
• Enlaces
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• Resumen

  • Purpose – The purpose of this paper is to present a novel structure of 4H‐SiC bipolar junction transistor (BJT) to realize high current gain, high current gain stability, and high breakdown voltage.

    Design/methodology/approach – A novel structure of 4H‐SiC BJT with floating buried layer in the base epilayer is presented. The simulation and optimization are done using the TCAD tool.

    Findings – This novel structure is increasing the current gain effectively, at the same time, the current gain stability and breakdown voltage are higher comparing with the conventional structure.

    Originality/value – The paper proposes a new “4H‐SiC FBL‐BJT” with high current gain, high current gain stability and high breakdown voltage.