Energetic deposition, measurement and simulation of graphitic contacts to 6H-SiC

• Autores: Hiep Tran, Masturina Kracica, Dougal McCulloch, Edwin Mayes, Anthony Holland, James Partridge
• Localización: Microelectronics reliability, ISSN 0026-2714, Nº. 71, 2017, págs. 82-85
• Idioma: inglés
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• Resumen

  • Abstract Junctions between energetically deposited graphitic carbon and n-type 6H-SiC have been fabricated. Their current-voltage characteristics have been measured and compared with simulations using Sentaurus TCAD finite element software. Agreement between the experimental and simulated current-voltage characteristics was achieved using parameters derived from electrical measurements and electron microscopy. Using the best-fit models, the effects of interfacial layers and contact work function variations were elucidated to provide guidance for improved device performance.