Self-triggered stacked silicon-controlled rectifier structure (STSSCR) for on-chip electrostatic discharge (ESD) protection

• Autores: Liu Jizhi, Qian Lingli, Tian Rui, Liu Zhiwei, Zhao Liu, Cheng Hui
• Localización: Microelectronics reliability, ISSN 0026-2714, Nº. 71, 2017, págs. 1-5
• Idioma: inglés
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• Resumen

  • Abstract In order to improve the holding voltage and keep the trigger voltage of the silicon controlled rectifier (SCR) devices, a new self-triggered stacked SCR structure (STSSCR) is proposed for on–chip electrostatic discharge (ESD) protection. The STSSCR structure consists of a modified lateral SCR (MLSCR) and multiple double trigger SCRs (DTSCRs). The trigger voltage of the structure is decided by the trigger voltage of the MLSCR. And the holding voltage is decided by the holding voltage of the SCRs and the number of the DTSCR in the STSSCR structure. The simulation and experimental results show that STSSCR has a stable trigger voltage, a small trigger current and an adjustable high holding voltage.