Development and application of the Oxide Stress Separation technique for the measurement of ONO leakage currents at low electric fields in 40 nm floating gate embedded-flash memory

• Autores: Adam Dobri, Simon Jeannot, Fausto Piazza, Carine Jahan, Jean Coignus, Luca Perniola, F. Balestra
• Localización: Microelectronics reliability, ISSN 0026-2714, Nº. 69, 2017, págs. 47-51
• Idioma: inglés
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