Microstructural and thermal characterizations of light-emitting diode employing a low-temperature die-bonding material

• Autores: Tzu-Hao Wang, Hsuan Lee, Chih-Ming Chen, Ming-Guan Chen, Chi-Chang Hu, Yu-Jie Chen, Ray-Hua Horng
• Localización: Microelectronics reliability, ISSN 0026-2714, Nº. 63, 2016, págs. 68-75
• Idioma: inglés
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• Resumen

  • Abstract A Sn/Bi bilayer was deposited on a hot air solder leveling (HASL)-treated metal-core printed circuit board (MCPCB) using electroplating as a low-temperature die-bonding material for light-emitting diode (LED). The eutectic feature of the Sn/Bi contact enabled the die-bonding process to accomplish through a liquid/solid reaction at 185 °C with a proper compression force. A high-temperature die-bonding structure composed of a Bi layer sandwiched by two intermetallic compounds (IMCs) formed after thermocompression. Employment of the Sn/Bi bilayer for low-temperature die-bonding prevented the LEDs from thermal stress problems, and the resulting high-temperature IMC/Bi/IMC die-bonding structure was capable of withstanding multiple bonding reactions and high temperature/current operation environment. Durability tests including mechanical, thermal, and optical performance were systematically performed and compared with other commercially available die-bonding materials (Ag paste and solder alloys).