ELDRS in SiGe transistors for room and low-temperature irradiation

• Autores: V.S. Pershenkov, A.S. Bakerenkov, V.A. Felitsyn, A.S. Rodin, V.A. Telets, V.V. Belyakov
• Localización: Microelectronics reliability, ISSN 0026-2714, Nº. 63, 2016, págs. 56-59
• Idioma: inglés
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• Resumen

  • Abstract The possible physical mechanism of ELDRS effect in the silicon-germanium (SiGe) bipolar transistors for room and low-temperature irradiation is described. The mechanism is connected with narrowing of the bandgap in transistor base region due to Ge content.