Resumen de Very small snapback silicon-controlled rectifier for electrostatic discharge protection in 28 nm processing

Weihuai Wang, Hao Jin, Wei Guo, Shurong Dong, Wei Liang, J.J. Liou, Yan Han

• Abstract A novel silicon-controlled rectifier (SCR)-based device with very small snapback is proposed in this paper. New features including an embedded gate-to-VDD PMOS (GDPMOS) and lateral n-p-n BJT are used to achieve low trigger and high holding voltages suitable for electrostatic discharge (ESD) protection of 28-nm CMOS technology with very narrow ESD operation windows. Measured results show an ESD operation window of less than 1 V. TCAD simulation is also carried out to demonstrate the underlying physical mechanisms.