Comparison of electrical characteristics between AlGaN/GaN and lattice-matched InAlN/GaN heterostructure Schottky barrier diodes

• Autores: Jian Ren, Dawei Yan, Yang Zhai, Wenjie Mou, Xiaofeng Gu
• Localización: Microelectronics reliability, ISSN 0026-2714, Nº. 61, 2016, págs. 82-86
• Idioma: inglés
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  • Abstract Lattice-matched Pt/Au–In0.17Al0.83N/GaN hetreojunction Schottky barrier diodes (SBDs) with circular planar structure have been fabricated. The electrical characteristics of InAlN/GaN SBD, such as two-dimensional electron gas (2DEG) density, turn-on voltage, Schottky barrier height, reverse breakdown voltage and the forward current-transport mechanisms, are investigated and compared with those of a conventional AlGaN/GaN SBD. The results show that, despite the higher Schottky barrier height, more dislocations in InAlN layer causes a larger leakage current and lower reverse breakdown voltage than the AlGaN/GaN SBD. The emission microscopy images of past-breakdown device suggest that a horizontal premature breakdown behavior attributed to the large leakage current happens in the InAlN/GaN SBD, differing from the vertical breakdown in the AlGaN/GaN SBD.