Hot electrons induced degradation in lattice-matched InAlN/GaN high electron mobility transistors

• Autores: Jian Ren, Dawei Yan, Wenjie Mou, Yang Zhai, Guofeng Wang, Xiaofeng Gu
• Localización: Microelectronics reliability, ISSN 0026-2714, Nº. 56, 2016, págs. 34-36
• Idioma: inglés
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• Resumen

  • AbstracIn this paper, lattice-matched Pt/Au-In0.17Al0.83N/GaN high electron mobility transistors (HEMTs) were fabricated, and the degradation characteristics of the gate leakage current were investigated by drain-to-source voltage (VDS) step-stress measurements under the ON, semi-ON, and OFF stress conditions and at different temperatures, respectively. It is found that, (1) there exists a critical value of VDS, beyond which the gate leakage current begins to increase significantly; and (2) the degradation of gate leakage current has a positive temperature coefficient, indicating that high temperature can accelerate the degradation. A hot electron model is used to explain the experimental results, emphasizing that the hot electrons from the channel can induce additional negatively charged defects at the InAlN/GaN interface, which can increase the local electrical field and introduce a thinner surface barrier and finally enhance the vertical leakage current component, leading to the current degradation.