Variación de la emisión de fotoluminiscencia de puntos cuánticos de inas con tratamiento térmico.
- Autores: L. D. Cruz, J. L. Casas, T. V. Torchynska
- Localización: Ciencias Naturales y Exactas Handbook T-II: Congreso Interdisciplinario de Cuerpos Académicos / coord. por Vicente Pérez García, José Luis Mínguela Ramírez, José Luis Rodríguez Muñoz, 2014, ISBN 978-607-8324-18-7, págs. 35-40
- Idioma: español
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Resumen
The photoluminescence (PL) and its temperature dependence have been studied in MBE grown InAs quantum dots (QDs) embedded in Al0.3Ga0.7As/In0.15Ga0.85As/AlxGayInzAs quantum wells (QWs) with two capping layers (Al0.40Ga0.45In0.15As or GaAs) and after the thermal annealing. Temperature dependences of PL peak positions in QDs have been analyzed in the range of 10-400K and compared with the temperature shrinkage of the band gap in the bulk InAs crystal. This permits to investigate the efficiency of the Ga/In interdiffusion processes in dependence on the capping layer compositions and thermal annealing. Experimental and fitting parameters obtained for InAs QDs have been compared with known ones for the bulk InAs crystal. It is revealed that the efficiency of the Ga/In interdiffusion depends essentially on the capping layer compositions. It is also shown the fast thermal decay of the integrated PL intensity in the structure with the GaAs capping layer in comparison with other one with AlGaInAs capping. To confirm the change in the material composition due to interdiffusion Ga/In in the quantum dots of InAs.
