Refractive index changes in n-type delta-doped GaAs under hydrostatic pressure

• Autores: O. Oubram, I. Rodríguez Vargas, J.C. Martínez-Orozco
• Localización: Revista Mexicana de Física, ISSN-e 0035-001X, Vol. 60, Nº. 2, 2014, págs. 161-167
• Idioma: inglés
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• Resumen

  • The effect of hydrostatic pressure on the refractive index changes (RIC) is studied in "delta"-doped quantum well (DDQW) in GaAs. Based on the effective mass approximation we implement an algebraic formalism to calculate the electronic structre and RIC. Our results obtained with this model show that the position and the magnitude of the linear, nonlinear and total RIC are sensitive to hydrostatic pressure and bidimensional density. The incident optical intensity has a great effect on these optical quantities.