Common-source cold-FET used to validate noise figure measurements and on-wafer FET noise parameters

• Autores: B.E. Figueroa Reséndiz, M.C. Maya-Sánchez, J.A. Reynoso-Hernández
• Localización: Revista Mexicana de Física, ISSN-e 0035-001X, Vol. 59, Nº. 6, 2013, págs. 560-569
• Idioma: inglés
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• Resumen

  • This work proposes the use of a common-source cold-FET with gate forward biased to validate the noise figure measurements and the noise parameters of on-wafer transistors. Since a common-source cold-FET behaves as an attenuator, its noise figure and noise parameters can be determined from S-parameters measurements. Three methods for determining the noise parameters of the common-source cold-FET are investigated. The first one uses the noise correlation matrix for passive devices (the S-parameters), the second one is the tuner method and the third one is the F_(50) method. The noise figure measured and the noise figure computed from S-parameters agree quite well. The noise parameters extracted with the tuner method and the F_(50) method show good correlation with the noise parameters computed with the S-parameters. These results validate both the noise figure measurements and the noise parameters extraction.