Resumen de Electroluminescence from Si-based light emitting devices
B. Mundet, Y. Berencén, J.M. Ramírez, Josep Montserrat, Carlos Dominguez Horna, Blas Garrido Fernández
- español
Electro-optical properties of a multilayer structure composed by silicon-rich silicon oxide (SiOₓ), silicon oxide (SiO₂) and silicon-rich silicon nitride (SiNₓ) are studied on this work. A 12% Si excess has been introduced by means of ion implantation in both SiOₓ and SiNₓ layers. The electrical characterization allowed us to identify as Poole-Frenkel the main electrical transport mechanism which governs these structures. In addition, remarkable enhancement to the electroluminescence emission was provided by increasing the accelerator layer thickness (intermediated SiO₂). The results open new routes toward the design and development of integrated Si-based light emitters.
- español
Electro-optical properties of a multilayer structure composed by silicon-rich silicon oxide (SiOₓ), silicon oxide (SiO₂) and silicon-rich silicon nitride (SiNₓ) are studied on this work. A 12% Si excess has been introduced by means of ion implantation in both SiOₓ and SiNₓ layers. The electrical characterization allowed us to identify as Poole-Frenkel the main electrical transport mechanism which governs these structures. In addition, remarkable enhancement to the electroluminescence emission was provided by increasing the accelerator layer thickness (intermediated SiO₂). The results open new routes toward the design and development of integrated Si-based light emitters.
