Electrical characterization of planarized a-SiGe:H Thin-film Transistors

• Autores: M. Domínguez, P. Rosales, A. Torres
• Localización: Revista Mexicana de Física, ISSN-e 0035-001X, Vol. 59, Nº. 1, 2013, págs. 62-65
• Idioma: inglés
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• Resumen

  • In this work the electrical characterization of n-channel a-SiGe:H TFTs with planarized gate electrode is presented. The planarized a-SiGe:H TFTs were fabricated at 200ºC on corning glass substrate. The devices exhibit a subthreshold slope of 0.56 V/Decade, an on/off-current ratio approximately of 10^6 and off-current approximately of 0.3x10^-12A. The results show an improvement of the electrical characteristics when are compared to those unplanarized devices fabricated at higher temperature. Moreover, the simulation of the device using a SPICE model is presented.