Resumen de Fabrication and study of photovoltaic properties of CdO/Si heterojunctions
S. Sabry Raad, Ibrahim R. Agool, Jameel I. Kadum
CdO thin films (thickness = 150, 200, 250 nm) were prepared by thermal oxidation of metallic Cd thin films, vacuum evaporated onto glass and mirror-like single-crystal p-Si substrates. Cd films subsequently were heat treated in two manners: Gradual heating up to the temperature of 625 ºK and maintained at this temperature for 2h, and by Rapid thermal oxidation (RTO) at the same temperature for 45 sec. The results of optical and electrical properties of grown CdO films are reported. The e!ectrica! and photovoltaic properties of CdO/Si devices were studied. The effect of oxidation procedure on the optical transmission spectra of obtained CdO fi!ms was investigated, the optical band gap was found to be of 2.6, 2.65 and 2.7 eV respectively. Characteristics including I- V, C- V were studied at the build-in-potential equal to 2, 1.8 and 1.4 eV respectively. The ideality factor turned out to be 1.8, 2, 2.1, the short circuit photocurrent to be 530, 498, 452 μA, the open circuit photovoltge 401, 381.8, 349 mV respectively at AM1 condition.
