Theoretical model to study the effect of illumination on (J -V) characteristics of MIS hetero-junction devices irradiated by Gamma ray

• Autores: Mahasin F. Hadi Al-Kadhemy, Marwa Abdul Muhsien Hassan
• Localización: Atti della Fondazione Giorgio Ronchi, ISSN 0391-2051, Anno 66, Nº. 4, 2011, págs. 533-539
• Idioma: inglés
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• Resumen

  • An experimental study and theoretical analysis of the effect of power intensity of illumination on the SnO[subíndice 2]/n-Si Hetero-junction devices irradiated with 50 min Gamma ray have been carried out. The effect of various values of power intensity of illumination on (J-V) characteristic was demonstrated. The power intensity of illumination considered in this work were 1.95, 2.88, 3.78, 5.9, and 9.5 mw/cm². The optimal case of efficiency of device was shown at 9.5 mw/cm². To estimate theoretical modeling equation of the effect of illumination on the (J-V) curve, the "Table Curve 2D version 5.01" program was used to achieve this process. The best fitting equation is given as follows y +a+bx+cexpt(x) which represents theoretical modeling equation. We have calculated the parameters a, b, and c as a function of power intensity and tested the equation for power intensity 4 and 7 mw/cm². Theoretical (J-V) curves are plotted with experimental data. It appears that there is a good agreement between them. It appears also that the behavior of these two curves contains a linear term and an exponential term.