High temperature pulsed measurements of AlGaN/GaN HEMTs on high resistive Si(111) substrate

• Autores: M. Werquin, D. Ducatteau, N. Vellas, E. Delos, Y. Cordier, R. Aubry, C. Gaquière
• Localización: Microwave and optical technology letters, ISSN 0895-2477, Vol. 48, Nº. 11, 2006, págs. 2303-2305
• Idioma: inglés
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• Resumen

  • DC- and RF-pulsed measurements of AlGaN/GaN HEMTs on high resistive silicon (111) substrate are achieved under probes in the 300–525 K temperature range. Current collapse and heating effects are studied and it demonstrates the high temperature properties of these devices. Hence the potential of this technology for power applications at microwave frequencies is confirmed.