International journal of numerical modelling: Electronic networks, devices and fields

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  Año 2005, Número 4

  • Channel noise enhancement in small geometry MOSEFT and its influence on phase noise calculation of integrated voltage-controlled oscillator

    T. Ohguro, K. Kojima, N. Itoh

    págs. 255-266

    

  • A new adaptive multi-bias S-parameter measurement algorithm for transistor characterization

    C. van Niekerk

    págs. 267-282

    

  • Non-linear performance comparison for FD and PD SOI MOSFETs based on the integral function method and Volterra modelling

    A. Cerdeira, D. Schreurs, B. Parvais, J. P. Raskin

    págs. 283-296

    

  • Analysis of DGS structures by using the iterative method

    M. Yeddes, M. Kaddour, A. Gharsallah

    págs. 297-312

    

  • Analysis of parasitic quantum effects in classical CMOS circuits

    F. Felgenhauer

    págs. 313-323