Resumen de In plane magnetic field and intense laser field effects on second harmonic generation of asymmetric AlGaAs/GaAs double quantum well
J. Pérez González, J.G. Rojas Briseño, F.M. Nava Maldonado, A. Del Río De Santiago, F. Ungan, H. Dakhlaoui, J.C. Martínez-Orozco
The optical properties for nano-structured semiconductor systems are of great importance nowadays, due to its possible implementation for the design of efficient optoelectronic devices. It is also well known that external fields can modify the electronic structure and induce changes the optical properties as well. In particular the asymmetric double quantum well structures are of paramount importance because its wide range of possible configurations and also because are experimentally feasible and well controlled, particularly Al_(x)Ga_(1−x)As/GaAs heterostructures. In this work we report a systematic study on second harmonic generation (SHG) for an asymmetric Al_(x)Ga_(1−x)As/GaAs double quantum well, as a function of non-resonant intense laser field and an (in-plane) magnetic field. We analyze the energy level behavior as well as the dipole matrix elements as a function of the above mentioned factors, that are important for the SHG, as we discus in this paper. We report a particular configuration that enhance the SHG signal, with and without intense laser field effect, as well as magnetic fields, that also can be uses to tune the SHG.
