Electroluminescence from Si-based light emitting devices

• Autores: B. Mundet, Y. Berencén, J.M. Ramírez, Josep Montserrat, Carlos Dominguez Horna, Blas Garrido Fernández
• Localización: Óptica pura y aplicada, ISSN-e 2171-8814, Vol. 46, Nº. 4, 2013 (Ejemplar dedicado a: VIII Spanish Meeting on Optoelectronics), págs. 315-319
• Idioma: español
• Títulos paralelos:
  • Electroluminiscencia de dispositivos emisores de luz basados en tecnología de silicio
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• Resumen
  • español

    Electro-optical properties of a multilayer structure composed by silicon-rich silicon oxide (SiOₓ), silicon oxide (SiO₂) and silicon-rich silicon nitride (SiNₓ) are studied on this work. A 12% Si excess has been introduced by means of ion implantation in both SiOₓ and SiNₓ layers. The electrical characterization allowed us to identify as Poole-Frenkel the main electrical transport mechanism which governs these structures. In addition, remarkable enhancement to the electroluminescence emission was provided by increasing the accelerator layer thickness (intermediated SiO₂). The results open new routes toward the design and development of integrated Si-based light emitters.

  • español

    Electro-optical properties of a multilayer structure composed by silicon-rich silicon oxide (SiOₓ), silicon oxide (SiO₂) and silicon-rich silicon nitride (SiNₓ) are studied on this work. A 12% Si excess has been introduced by means of ion implantation in both SiOₓ and SiNₓ layers. The electrical characterization allowed us to identify as Poole-Frenkel the main electrical transport mechanism which governs these structures. In addition, remarkable enhancement to the electroluminescence emission was provided by increasing the accelerator layer thickness (intermediated SiO₂). The results open new routes toward the design and development of integrated Si-based light emitters.