Photoluminiscence response of nanocrystalline GaAs thin films grown by R.F. magnetron sputtering in the blue-violet region

• Autores: Fernando Gordillo Delgado, J.G. Mendoza-Álvarez, O. Zelaya-Angel
• Localización: Revista de la Sociedad Colombiana de Física, ISSN-e 0120-2650, Vol. 37, Nº. 1, 2005, págs. 241-245
• Idioma: inglés
• Texto completo no disponible (Saber más ...)
• Resumen

  • Using the transmission electron microscopy (TEM) photographs we were able to obtain the mean grain sizes in GaAs nanocrystalline films grown by the r.f. sputtering deposition technique, which were in the range between about 17 and 19 Å. The photoacoustic (PA) technique was used to measure the absorption spectra in these films. In the spectra obtained by PA spectroscopy it was possible to distinguish clearly the bands due to transitions between quantized levels. From these PA measurements and the photoluminescence emission in the films it was possible to observe a high blue shift of the absorption edge, due to the quantum confinement effects. We have for explain the behavior of shift of the absorption edge with the nanocrystals size the parabolic bands model