Adaptative meshing applied a two-dimensional device simulator
S.P. Edwards, K. De Meyer, Ph. De Wilde
págs. 65-70
A novel method for solving the continuity equations
C.J. Fitzsimons
págs. 71-76
Time perturbation analysis for the mos system
Michael Gaitan, Isaak D. Mayergoyz
págs. 77-83
Two-dimensional modeling and parameter extraction of aged MOSFETs
H. Haddara, S. Cristoloveanu
págs. 85-91
Dynamics of electron transfer between two adjacent channels as calculated by an ensemble Monte Carlo method
I.C. Kizilyalli, K. Hess, G.J. Iafrate, D. Smith
págs. 93-97
The moments of the boltzmann trasport equation as applied to the gallium arsenide permeable base transistor
J.P. Kreskovsky, M. Meyyappan, H.L. Grubin
págs. 99-105
The extraction of terminal charges from two-dimensional device simulations of mos transistors
E.J. Prendergast, P. Lloyd, H. Dirks
págs. 107-114
A viscoelastic bem for modeling oxidation
Thye Lai Tung, Jerome Connor, Dimitri A. Antoniadis
págs. 115-121
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