Simulation of coupled impurities diffusion under oxidizing conditions. Application to the optimization of the p-Wells in CMOS technology
Y. Depeursinge, L. Guex, J.M. Moret, P. Weiss
págs. 149-160
Simulation of solar cells using the boundary-element method
P. de Visschere
págs. 161-177
The infinite boundary element method and its application to a combined finite boundary element technique for unbounded field problems
Y. Kagawa, T. Yamabuchi, S. Kitagami
págs. 179-193
Mapping of internal distributions onto a lumped element network for CMOS latch-up simulation
C. Werner, J. Harter, D. Takacs, A.W. Wieder
págs. 195-206
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