Resumen de The use of realistic bandstructure in impact ionisation calculations for wide bandgap semiconductors:: application to INP and GaAs

S.P. Wilson, S. Brand, A.R. Beattie, R.A. Abram

• A non‐local pseudopotential model is used to generate realistic bandstructure for InP and GaAs. This is used to calculate the thresholds for impact ionisation and ionisation rates in these materials as a function of direction in wavevector space. Results are presented for a range of transitions.