One-dimensional modelling of diffusion in semiconductors during crystal growth

• M.T. Hearne ^[1] ; T.G. Rogers ^[1] ; B. Tuck ^[1]
  1. [1] University of Nottingham

     University of Nottingham

     Reino Unido

     
• Localización: Compel: International journal for computation and mathematics in electrical and electronic engineering, ISSN 0332-1649, Vol. 6, Nº 4, 1987, págs. 211-225
• Idioma: inglés
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• Resumen

  • A simple approach is developed for modelling the distribution of dopant in crystals grown by the Czochralski technique. Allowance is made for the temperature dependence of the diffusivity and for the diffusion of dopant behind the moving boundary. It is found that the effect can make a significant difference to the final dopant distribution. The diffusion process is modelled using a discrete method, previously developed for situations in which the boundary is static.