Resumen de A comparison of some methods for the solution of the nonlinear poisson equation in semiconductor device modelling
This paper examines several modifications to Newton's method for the numerical solution of the nonlinear Poisson equation which describes the electrostatic potential distribution in a semiconductor device. Two methods for a more efficient solution of the equation when the device is a Metal‐Oxide‐Semiconductor Field Effect Transistor are proposed. Their extension to the solution of the fully coupled system of equations is also discussed. The modifications to Newton's method are also compared numerically.
