A comparison of some methods for the solution of the nonlinear poisson equation in semiconductor device modelling

• Conor J. Fitzsimons ^[1]
  1. [1] Numerical Analysis Group, Trinity College, Irlandia
• Localización: Compel: International journal for computation and mathematics in electrical and electronic engineering, ISSN 0332-1649, Vol. 6, Nº 4, 1987, págs. 197-209
• Idioma: inglés
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• Resumen

  • This paper examines several modifications to Newton's method for the numerical solution of the nonlinear Poisson equation which describes the electrostatic potential distribution in a semiconductor device. Two methods for a more efficient solution of the equation when the device is a Metal‐Oxide‐Semiconductor Field Effect Transistor are proposed. Their extension to the solution of the fully coupled system of equations is also discussed. The modifications to Newton's method are also compared numerically.