Gaussian superlattice in GaAs/GaInNAs solar cells

• C.I. Cabrera ^[1] ; D.A. Contreras-Solorio ^[1] ; L. Hernández ^[1] ; A. Enciso ^[1] ; J.C. Rimada ^[2]
  1. [1] Universidad Autónoma de Zacatecas

     Universidad Autónoma de Zacatecas

     México

     
  2. [2] Universidad de La Habana

     Universidad de La Habana

     Cuba

     
• Localización: Revista Mexicana de Física, ISSN-e 0035-001X, Vol. 63, Nº. 3, 2017, págs. 223-229
• Idioma: inglés
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• Resumen

  • We present a new type of photovoltaic device where Gaussian superlattice is inserted in the i-region of a GaAs/GaInNAs p-i-n solar cell. A theoretical model is developed to study the performance of these devices. We establish a new criterion to calculate miniband widths in superlattice heterostructures in the presence of electric field. By optimizing miniband width, the spectral response of the cell in the energy region below the absorption edge of host material is significantly enhanced. Our results show that these devices could reach higher conversión efficiencies than the single-gap solar cell.