Publication: Síntesis y caracterización de micro- y nanomateriales de compuestos basados en óxido de galio
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2022-03-21
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Universidad Complutense de Madrid
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Abstract
En el presente trabajo de tesis doctoral se estudian y discuten algunas de las propiedades físicas más relevantes de nanomateriales basados en óxido de galio. Este material pertenece a la familia de los óxidos conductores transparentes (TCO), la mayoría de los cuales presentan propiedades idóneas para aplicaciones en diversos dispositivos como en optoelectrónica o células solares, entre otras muchas. El Ga2O3 es un semiconductor que presenta una banda de energías prohibidas o band gap muy ancha, principal propiedad por la que se le conoce y atrae la atención de los investigadores para aplicaciones tan variadas como por ejemplo fotodetectores de ultravioleta (UV) ciegos a la radiación solar o electrónica de alta potencia, entre otras. En este trabajo de tesis doctoral se estudiarán dos polimorfos del óxido de galio así como compuestos basados en el mismo, permitirá avanzar en la investigación actual de materiales de band gap muy ancho (WBG o wide band gap)...
In the present PhD, some of the most relevant physical properties of gallium oxide-based nanomaterials are studied and discussed. This material belongs to the family of transparent conductive oxides (TCO), most of which have suitable properties for applications in various devices such as optoelectronics or solar cells, among many others. Ga2O3 is a semiconductor that exhibits a ultra-wide band gap energy, the main property for which it is known and attracts the attention of researchers for applications as varied as, ultraviolet (UV) solar-blind photodetectors or high-power electronics, among others. In this thesis, two polymorphs of gallium oxide as well as compounds based on it will be studied, which will allow in the present research on ultra-wide band gap materials (WBG)..
In the present PhD, some of the most relevant physical properties of gallium oxide-based nanomaterials are studied and discussed. This material belongs to the family of transparent conductive oxides (TCO), most of which have suitable properties for applications in various devices such as optoelectronics or solar cells, among many others. Ga2O3 is a semiconductor that exhibits a ultra-wide band gap energy, the main property for which it is known and attracts the attention of researchers for applications as varied as, ultraviolet (UV) solar-blind photodetectors or high-power electronics, among others. In this thesis, two polymorphs of gallium oxide as well as compounds based on it will be studied, which will allow in the present research on ultra-wide band gap materials (WBG)..
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Tesis inédita de la Universidad Complutense de Madrid, Facultad de Ciencias Físicas, Departamento de Física de Materiales, leída el 17-12-2021